Years: 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005

2014

2013

• Baji Zs, Lábadi Z, Molnár Gy, Pécz B, Tóth A L, Tóth J, Csik A, Bársony I: Post-selenization of stacked precursor layers for CIGS, VACUUM 92: pp. 44-51. (2013)
• Bányász I, Berneschi S, Fried M, Lohner T, Conti GN, Righini GC, Pelli S, Zolnai Z: M-line spectroscopic, spectroscopic ellipsometric and microscopic measurements of optical waveguides fabricated by MeV-energy N+ ion irradiation for telecom applications, THIN SOLID FILMS 541: pp. 3-8. (2013)
• Bányász I, Zolnai Z, Fried M, Lohner T, Berneschi S, Righini GC, Pelli S, Nunzi-Conti G: Single- and double energy N+ ion irradiated planar optical waveguides in Er: Tungsten-tellurite oxide glass and sillenite type Bismuth Germanate crystals working up to telecommunications wavelengths, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 307: pp. 299-304. (2013)
• Bosi M, Attolini G, Pécz B, Zolnai Z, Dobos L, Martínez O, Jiang L, Taysir S: Structural characterization of 3C-SiC grown using methyltrichlorosilane: Silicon Carbide and Related Materials 2012, MATERIALS SCIENCE FORUM 740-742:pp. 291-294.(2013)
• Dózsa L, Molnár G, Zolnai Z, Dobos L, Pécz B, Galkin NG, Dotsenko SA, Bezbabny DA, Fomin DV: Formation and characterization of semiconductor Ca2Si layers prepared on p-type silicon covered by an amorphous silicon cap, JOURNAL OF MATERIALS SCIENCE 48:(7) pp. 2872-2882.(2013)
• Fekete Z, Hajnal Z, Márton G, Fürjes P, Pongrácz A: Fracture analysis of silicon microprobes designed for deep-brain stimulation, MICROELECTRONIC ENGINEERING 103:pp. 160-166.(2013)
• Fekete Z, Pongracz A, Marton G, Furjes P: On the fabrication parameters of buried microchannels integrated in in-plane silicon microprobes,MATERIALS SCIENCE FORUM 729:pp. 210-215.(2013)
• Horváth ZsJ, Basa P, Jászi T, Molnár KZ, Pap AE, Molnár Gy: Charging behavior of silicon nitride based non-volatile memory structures with embedded semiconductor nanocrystals, APPLIED SURFACE SCIENCE 269:pp. 23-28.(2013)
• Horváth ZsJ, Basa P, Molnár KZ, Jászi T, Pap AE, Molnár Gy, Dobos L, Tóth L, Pécz B: Charging Behaviour of Metal-Nitride-Oxide-Semiconductor Memory Structures with Embedded Si or Ge Nanocrystals,NANOSCIENCE AND NANOTECHNOLOGY LETTERS 5:(4) pp. 513-517.(2013)
• Horváth ZsJ, Basa P, Molnár KZ, Molnár Gy, Jászi T, Pap AE, Effect of location of Si or Ge nanocrystals on the memory behavior of MNOS structures, PHYSICA E - LOW-DIMENSIONAL SYSTEMS AND NANOSTRUCTURES 51:pp. 104-110.(2013)
• Kárpáti T, Kulinyi S, Végvári R, Ferencz J, Nagy A, Pap AE, Battistig G: Packaging of a 3-axial piezoresistive sensor with backside contacts,MICROSYSTEM TECHNOLOGIES in press:p. in press. 7 p. (2013)
• Marton G, Fekete Z, Fiath R, Baracskay P, Ulbert I, Juhasz G, Battistig G, Pongracz A: In vivo measurements with robust silicon-based multielectrode arrays with extreme shaft lengths, IEEE SENSORS JOURNAL 13:(9) pp. 3263-3269.(2013)
• Molnár G: Epitaxy in solid-phase thin film reactions: Nucleation-controlled growth of iron silicide nanostructures on Si(001), JOURNAL OF MATERIALS RESEARCH 28:(13) pp. 1724-1728.(2013)
• Molnár G, Dózsa L, Vértesy Z, Horváth ZsJ: New optoelectronic materials: Effects of annealing upon the formation of epitaxial iron silicide nanostructures on Si(001), PHYSICA E - LOW-DIMENSIONAL SYSTEMS AND NANOSTRUCTURES 51:pp. 79-86.(2013)
• Oh S, Nagata T, Volk J, Wakayama Y: Improving the performance of inorganic-organic hybrid photovoltaic devices by uniform ordering of ZnO nanorods and near-atmospheric pressure nitrogen plasma treatment, JOURNAL OF APPLIED PHYSICS 113:pp. 083708-1-083708-6.(2013)
• Pécz B, Baji Zs, Lábadi Z, Kovács A: ZnO layers deposited by Atomic Layer Deposition, JOURNAL OF PHYSICS-CONFERENCE SERIES 471:(1) Paper 012015. 4 p. (2013)
• Petrik P, Pollakowski B, Zakel S, Gumprecht T, Beckhoff B, Lemberger M, Labadi Z, Baji Z, Jank M, Nutsch A: Characterization of ZnO structures by optical and X-ray methods, APPLIED SURFACE SCIENCE 281:pp. 123-128.(2013)
• Pongrácz A, Fekete Z, Márton G, Bérces Z, Ulbert I, Fürjes P: Deep-brain silicon multielectrodes for simultaneous neural recording and drug delivery, Sensors and Actuators B: Chemical Volume 189, pp. 97–105 (2013)
• Saftics A, Agócs E, Fodor B, Patkó D, Petrik P, Kolari K, Aalto T, Fürjes P, Horvath R, Kurunczi S, Investigation of thin polymer layers for biosensor applications, APPLIED SURFACE SCIENCE 281: pp. 66-72. (2013)
• Szabó Z, Volk J, Fülöp E, Deák A, Bársony I: Regular ZnO nanopillar arrays by nanosphere photolithography, PHOTONICS AND NANOSTRUCTURES 11:(1) pp. 1-7. (2013)
• Tóth BG, Péter L, Dégi J, Révész Á, Oszetzky D, Molnár G, Bakonyi I: Influence of Cu deposition potential on the giant magnetoresistance and surface roughness of electrodeposited Ni-Co/Cu multilayers, ELECTROCHIMICA ACTA 91: pp. 122-129. (201Z
• Zolnai Z, Shape, size, and atomic composition analysis of nanostructures in 3D by Rutherford backscattering spectrometry, APPLIED SURFACE SCIENCE 281: pp. 17-23. (2013)

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2012

• Z Baji, Z Lábadi, Z E Horváth, G Molnár, J Volk, I Bársony, P Barna: Nucleation and growth modes of ALD ZnO, Crystal Growth & Design 12:(11) (2012) 5615-5620, IF: 4.720
• N Nagy, Z Zolnai, A Deák, M Fried, I Bársony: Various nanostructures on macroscopically large areas prepared by tunable ion-swelling, Journal Of Nanoscience And Nanotechnology 12:(8)6712-6717, IF: 1.563
• N Nagy, Z Zolnai, E Fülöp, A Deák, I Bársony, Tunable Ion-Swelling For Nanopatterning Of Macroscopic Surfaces: The Role Of Proximity Effects, Applied Surface Science 259 (2012)331-337, IF: 2.103
• E Fülöp, N Nagy, A Deák, I Bársony: Langmuir–Blodgett Films Of Gold/Silica Core/Shell Nanorods, Thin Solid Films 520 (2012)7002-7005, IF: 1.890
• G Attolini, M Bosi, B Watts, G Battistig, L Dobos, B Pecz: The Influence Of C3H8 And Cbr4 On Structural And Morphological Properties Of 3C-SiC Layer, Materials Science Forum 711 (2012) 22-26
• S Abo, H Horiuchi, F Wakaya, G Battistig, T Lohner, M Takai: Time Of Flight Elastic Recoil Detection Analysis With Toroidal Electrostatic Analyzer For Ultra Shallow Dopant Profiling, Surface And Interface Analysis 44:(6) (2012) 732-735, IF: 1.180
• A Saftics, E Agócs, B Fodor, D Patkó, P Petrik, K Kolari, T Aalto, P Fürjes, R Horvath, S Kurunczi: Investigation Of Thin Polymer Layers For Biosensor Applications, Applied Surface Science 1:(1) (2012) 1-10, IF: 2.103
• L Dózsa, G Molnár, Z Zolnai, L Dobos, B Pécz, N Galkin , S Dotsenko, D Bezbabny, D Fomin: Formation And Characterization Of Semiconductor Ca2Si Layers Prepared On P-Type Silicon Covered By An Amorphous Silicon Cap, Journal Of Materials Science 2012.Okt: Paper Doi 10.1007/S10853-012-6945-6, IF: 2.015
• L Dózsa, S Lányi: Local Capacitance Analysis Using A Modified Deep Level Spectrometer Central European Journal Of Physics 10:(5) (2012) 1178-1182, IF: 0.909
• R Erdélyi, H M Madsen, G Sáfrán, Z Hajnal, I E Lukacs, G Fülöp, S Csonka, J Nygard, J Volk: In-Situ Mechanical Characterization Of Wurtzite InAs Nanowires, Solid State Communications 152 (2012) 1829-1833, IF: 1.649
• S Lugomer, A. Maksimovic, B. Farkas, Z. Geretovszky, T. Szörényi, A. L. Tóth, Z Zolnai , I Bársony: Multipulse irradiation of silicon by femtosecond laser pulses: Variation of surface morphology, Applied Surface Science 258 (2012) 3589-3597, IF: 1.793
• B Szentpáli, G Matyi, P Fürjes, E László, G Battistig, I Bársony, G Károlyi, T Berceli:Thermopile-based THz antenna,Microsyst Technol. 18 (2012) 849-856, IF:1.017
• Z Fekete, P Nagy, G Huszka, F Tolner, A Pongrácz, P Fürjes, Performance characterization of micromachined particle separation system based on Zweifach-Fung effect, Sensors and Actuators B-Chemical 162 (2012) 89-94, IF: 3.368
• Z Fekete, A Pongracz, P Furjes, G Battistig: Improved process flow for buried channel fabrication in silicon, Microsystem Technologies 18 (2012) 353-358, IF: 0.931
• M Dangelo, G. Deokar, S. Steydli, A. Pongracz, B. Pécz, M.G. Silly, F. Sirotti, C. Deville Cavellin: In-situ formation of SiC nanocrystals by high temperature annealing of SiO2/Si under CO: A photoemission study, Surface Science 606 (2012) 697, IF: 2.010
• G Battistig: Orientation dependent growth of SiC nanocrystals at the SiO2/Si interface, Thin Solid Films 520 (2012)1973-1977, IF: 1.909
• G Molnár, L Dózsa, Z Vértesy, Zs Baji, G Pető: Thickness and annealing dependent morphology changes of iron silicide nanostructures on Si(001), Physica Status Solidi C-Conferences and Critical Reviews 9 (2012) 1366-1369
• ZJ Horváth, KZ Molnár, G Molnár, P Basa, AE Pap, R Lovassy, P Turmezei: Charging behaviour of MNOS structures with embedded Ge nanocrystals, Physica Status Solidi C-Conferences and Critical Reviews 9 (2012) 1370-1373
• Zs Baji, A Szanyo, Gy Molnár, AL Tóth, G Pető, K Frey, E Kotai, G Kaptay: Formation of nanoparticles by ion beam irradiation of thin films, Journal of Nanoscience and Nanotechnology 12 (2012) 5009-5015, IF: 1.351
• Zs Baji, Z Lábadi, Z E Horváth, I Bársony: Structure and morphology of aluminium doped Zinc oxide layers prepared by atomic layer deposition, Thin Solid Films 520 (2012) 4703-4706, IF: 1.909

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2011

• L Grand, A Pongrácz, É Vázsonyi, G Márton, D Gubán, R Fiáth, BP Kerekes, Gy Karmos, I Ulbert, G Battistig: A novel multisite silicon probe for high quality laminar neural recordings, Sensors and Actuators A: Physical 166 (2011) 14-21
• Zs Baji, Z Lábadi, ZE Horváth, I Bársony: Structure and morphology of aluminium doped Zinc-oxide layers prepared by atomic layer deposition, Thin Solid Films 520 (2011) 4703-4706, IF: 1.890
• Zs Baji, Z Lábadi, ZE Horváth, M Fried, B Szentpáli, I Bársony: Temperature dependent in situ doping of ALD ZnO, JTAC 105 (2011)93-99, IF: 1.604
• R Erdelyi, T Nagata, DJ Rogers, FH Teherani, ZE Horvath, Z Labadi, Zs Baji, Y Wakayama, J. Volk: Investigations into the Impact of the Template Layer on ZnO Nanowire Arrays Made Using Low Temperature Wet Chemical Growth, Crystal Growth & Design 11 (2011)2515, IF: 4.720
• Z Zolnai, N Nagy, A Deák, G Battistig, E Kótai: Three dimensional view of the shape, size, and atomic composition of ordered nanostructures by Rutherford backscattering spectrometry, Physical Review B 83 (2011) 233302, IF: 3.691
• D G Merkel, L Bottyán, F Tanczikó, Z Zolnai, N Nagy, G Vértesy, J Waizinger, L Bommer: Magnetic patterning perpendicular anisotropy FePd alloy films by masked ion irradiation, Journal of Applied Physics 109 (2011) 124302, IF: 2.168
• P Petrik, Z Zolnai, O Polgar, M Fried, Z Betyak, E Agocs, T Lohner, C Werner, M Röppischer, C Cobet: Characterization of damage structure in ion implanted SiC using high photon energy synchrotron ellipsometry, Thin Solid Films 519 (2011) 2791-2794, IF: 1.890
• S Berneschi, M Brenci, G Nunzi Conti, S Pelli, M Bettinelli, A Speghini, I Bányász, M Fried, N Q Khanh, T Lohner, P Petrik, A Watterich, Z Zolnai: Slab optical waveguides in Er3+-doped tellurite glass by N+ ion implantation at 1.5 MeV, Optical Engineering 50 (2011) 071110, IF: 0.959
• Bosi M, Attolini G, Ferrari C, Frigeri C, Calicchio M, Rossi F, Vad K, Csik A, Zolnai Z: Effect of temperature on the mutual diffusion of Ge/GaAs and GaAs/Ge, Journal of Crystal Growth 318 (2011) 367-371, IF: 1.726

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2010

• B  Szentpáli, P  Basa, P  Fürjes, G. Battistig, I Bársony, K Károlyi, T Berceli, V Rymanov,  A Stöhr: Thermopile antennas for detection of millimeter waves, Applied Physics Letters  96 (2010) 133507
• S Kurunczi, A Németh, T Hülber, P Kozma, P Petrik, H Jankovics, A Sebestyén, F Vonderviszt, M Fried, I Bársony:  In situ ellipsometric study of surface immobilization of flagellar filaments. Applied Surface Science 257 (2010) 319-324, IF: 1.616
• A Németh, P Kozma, T Hülber, S Kurunczi, R Horváth, P Petrik, A Muskotál , F Vonderviszt, Cs Hős, M Fried, J Gyulai, I Bársony: In  situ spectroscopic ellipsometry study of protein immobilization on different substrates using liquid cells, Sensor Lett. 8 (2010) 730-735, IF: 1.587 
• G Attolini, M Bosi, F Rossi, BE Watts, G Salviati, G Battistig, L Dobos, B Pécz: SiC epitaxial growth on Si(100) substrates using carbon tetrabromide, Materials Science Forum 645 (2010) 139-142
• J Mizsei, AE Pap, K Gillemot, G Battistig: Effect of deuterium on passivation of Si surfaces (2010) Applied Surface Science 256 (2010) 5765-5770
• BE Watts, M Bosi, G Attolini, G Battistig, L Dobos, B Pécz: CBr4 as precursor for VPE growth of cubic silicon carbide, Crystal Research and Technology  45 (2010) 583-588.
• Z Zolnai, A Deák, N Nagy, AL Tóth, E Kótai, G Battistig: A 3D RBS study of irradiation-induced deformation and masking properties of ordered colloidal nanoparticulate masks, Nuclear Instruments and Methods in Physics Research B 268 (2010) 79–86, IF: 1,156
• N G Galkin, L Dozsa, E Chusovitin, B Pécz L Dobos: Migration of CrSi2 nanocrystals through nanopipes in the silicon cap, Applied Surface Science 256 (2010) 7331-7334 IF.1,616
• Z Fekete, P Fürjes, T Kárpáti, GAB Gál, I Rajta: MEMS-compatible hard coating technique of moveable 3D silicon microstructures, Materials Science Forum 659 (2010) 147-152
• Z Fekete, B Sinkovics, I Rajta, GAB Gal, P Fürjes: Characterization of the end-of-range geometric effects in complex 3D silicon micro-components formed by proton beam writing, Journal of Micromechanics and Microengineering 20 (2010) 064015, IF: 2.227
• ZJ Horváth, L Dobos, B Beaumont, Z Bougrioua, B Pécz: Electrical behaviour of lateral Al/n-GaN/Al structures, Appl. Surf. Sci. 256 (2010) 5614–5617, IF:  1.616
• AI Levtushenko, GV Lashkarev, VI Lazorenko, VA Karpyna, MG Dusheyko, VM Tkach, LA Kosyachenko, VM Sklyarchuk, OF Sklyarchuk, KA Avramenko, VV Strelchuk, ZJ Horvath: Effect of nitrogen doping on photoresponsivity of ZnO films, Phys. Stat. Sol. A, 207 (2010) 1746–1750, IF: 1.228
• L Péter, A Csik, K Vad, E Tóth-Kádár, A Pekker, G Molnár: On the composition depth profile of electrodeposited Fe-Co-Ni alloys,Electrochimica Acta 55 (16) (2010) 4734-4741, IF: 3.078
• I Mayer, G Pető, A Karacs, G Molnár, I Popov: Divalent Mn in calcium hydroxyapatite by pulse laser deposition,Journal of Inorganic Biochemistry 104 (2010) 1107-1111, IF: 3.252
• LP Biró, K Kertész, E Horváth, GI Márk, G Molnár, Z Vértesy, JF Tsai, A Kun, Z Bálint, J P. Vigneron: Bioinspired artificial photonic nanoarchitecture using the elytron of the beetle Trigonophorus rothschildi varians as a ‘blueprint’,Journal of the Royal Society Interface 7 (2010) 887-894, IF: 3.621
• A Nemcsics, S Nagy, I Mojzes, R Schwedhelm, S Woedtke, R Adelung, L Kipp: Investigation of the surface morphology on epitaxially grown fullerene structures, Vacuum 84 (2010) 152-254, IF: 1.048
• A Nemcsics, L Tóth, L Dobos, C Heyn, A Stemmann, A Schramm, H Welsch, W Hansen: Composition of the „GaAs” quantum dot, grown by droplet epitaxy, Superlattices and Microstructures 48 (2010) 351-357, IF: 1.091
• A Nemcsics, J Takács: Modelling of the hysteretic phenomena in RHEED intenity variation versus temperature for GaAs and InAs surfaces, Semiconductors  45 (2010) 93-96, IF: 0.603
• A Csík, M Serényi, Z Erdélyi, A Nemcsics, C Cserháti, G Langer, DL Beke, C Frigeri, A Simon: Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers, Vacuum 84 (2010) 137-140, IF: 1.048

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2009

• J Volk, T Nagata, R Erdélyi, I Bársony, AL Tóth, IE Lukács, Z Czigány, H Tomimoto, Y Shingaya, T Chikyow: Highly Uniform Epitaxial ZnO Nanorod Arrays for Nanopiezotronics, Nanoscale Research Letters, 4 (2009) 699-704, IF: 1.73
• P Csíkvári, P Fürjes, C Dücső, I Bársony: Micro-Hotplates for Thermal Characterisation of Structural Materials of MEMS, Microelectronics Journal 40 (2009) 1393-1397, IF: 0.609
• I Bársony, M Ádám, P Fürjes, R Lucklum, M Hirschfelder, S Kulinyi, C Dücső: Efficient catalytic combustion in integrated micropellistors, Meas. Sci. Technol. 20 (2009) 124009, IF: 1.493
• Á Németh, Z Lábadi, L Tóth, I Bársony: Oscillations and power-dependenhysteresis in reactive ZnO plasma, Vacuum 84 (2009) 218-220, IF: 0.975
• C Major, A Nemeth, G Radnoczi, Z Czigany, M Fried, Z Labadi, I Barsony: Optical and electrical characterization of aluminium doped ZnO layers, Applied Surface Science 255 8907-8912, IF: 1.576
• A Deák, P Fürjes, G Battistig, I Bársony: Integrált (nano)érzékelés az analitika szolgálatában, Magyar kémiai folyóirat, 115. évf. 1. sz., 2009
• CD Cavellin, I Trimaille, JJ Ganem, M D'Angelo, I Vickridge, A Pongracz, G Battistig: An 18O study of the interaction between carbon monoxide and dry thermal SiO2 at 1100 °c, Journal of Applied Physics 105 (2009) 033501, IF: 2.201
• J García López, Y Morilla, JC  Cheang-Wong, G Battistig, Z Zolnai, JL Cantin: Dynamic annealing study of SiC epilayers implanted with Ni ions at different temperatures, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 267 (2009) 1097-1100, IF: 1.156
• B Pécz, J Stoemenos, M Voelskow, W Skorupa, L Dobos, A Pongrácz, G Battistig: Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface by combined carbon implantation and annealing in CO atmosphere, Journal of Applied Physics 105 (2009) 083508, IF: 2.201
• A Pongracz, Y Hoshino, M D'Angelo, CD Cavellin, JJ Ganem, I Trimaille, G Battistig, KV Josepovits, I Vickridge: Isotopic tracing study of the growth of silicon carbide nanocrystals at the SiO2 /Si interface by CO annealing, Journal of Applied Physics 106 (2009) 024302, IF: 2.201
• M Fried, G Juhász, C Major, P Petrik, G Battistig: Homogeneity check of ion implantation in silicon by wide-angle ellipsometry, 17th IEEE International Conference on Advanced Thermal Processing of Semiconductors – RTP 2009, ISBN 978-1-4244-3815-0/09 IEEE. p. 147, IF: 0.957
• P Petrik. E Szilagyi, T Lohner, G Battistig, M Fried, G Dobrik, LP Biro: Optical models for ultra-thin oxides on Si-terminated and C-terminated faces of thermally oxidized SiC, Journal of Applied Physics 106 (2009) 123506, IF: 2.25
• N Dmitruk, L Dózsa, S Mamykin, O Kondratenko, G Molnár: Effect of annealing on optical properties of thin films with β-FeSi2 quantum dots, Vacuum 84 (2009) 238-242, IF:0.975
• I Rajta, S Z Szilasi, P Fürjes, Z Fekete, Cs Dücső: Si micro-turbine by proton beam writing and porous silicon micromachining, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 267 (2009) 2292-2295, IF: 1.156
• J Osán, F Reinhardt, B Beckhoff, AE Pap, S Török:
• Probing Patterned Wafer Structures by Means of Grazing Incidence X-ray Fluorescence Analysis, ECS Transactions 25 (2009) 441-451, IF: 2.5
• L Oroszi, A Der, H Kirei, V Rakovics, P Ormos: Manipulation of microfluidic flow pattern by optically controlled electroosmosis, Microfluidics and nanofluidics 6 (2009) 565-569, IF: 3.286

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2008

• P Kozma, N Nagy, S Kurunczi, P Petrik, A Hámori, A Muskotál, F Vonderviszt, M Fried, I Bársony: Ellipsometric characterization of flagellin films for biosensor applications, Physica Status Solidi C 5 (2008) 1427-1430
• AE Pap, C Dücső, K Kamaras, G Battistig, I Bársony: Heavy water in gate stack processing, Materials Science Forum 573 (2008) 119-131
• A Nemeth, C Major, M Fried, Z Labadi, I Barsony: Spectroscopic ellipsornetry study of transparent conductive ZnO layers for CIGS solar cell applications, Thin solid films 516 (2008) 7016-7020, IF: 1.693
• N Nagy, A Deak, A Hamori, Z Horvolgyi, M Fried, P Petrik, I Barsony: Comparative investigation of Stober silica Langmuir-Blodgett films as optical model structures, Phys Status Solidi A 205 (2008) 936-940, IF: 1.214
• M Adam, T Mohacsy, P Jonas, C Dücső, E Vazsonyi, I Barsony: CMOS integrated tactile sensor array by porous Si bulk micromachining, Sensor Actuat A Phys 142 (2008) 192-195, IF: 1.348
• A Németh, Z Lábadi, V Rakovics, I Bársony, I Krafcsik: Solar cell technology innovation center at MTA MFA: Híradástechnika, Infocommunications Journal, ISSN 0018-2028, (2008) (63. évf), 1. sz., 34-39
• NP Barradas, K Arstila, G Battistig, M Bianconi, N Dytlewski, C Jeynes, E Kótai, G Lulli, M Mayer, E Rauhala, E Szilágyi, M Thompson: Summary of "IAEA intercomparison of IBA software", Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 266 (2008) 1338-1342, IF: 0.999
• E Szilágyi, P Petrik, T Lohner, AA Koós, M Fried, G Battistig: Oxidation of SiC investigated by ellipsometry and Rutherford backscattering spectrometry, Journal of Applied Physics 104 (2008) 014903, IF: 2.171
• J Gyulai, G Battistig, T Lohner, Z Hajnal: Wedge etching by anodic oxidation and determination of shallow boron profile by ion beam analysis, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 266 (2008) 1434-1438, IF: 0.999
• TT Vouroutzis, CA Zorba, KM Dimitriadis, L Paraskevopoulos, l Dózsa, G Molnár: Growth of β-FeSi2 particles on silicon by reactive deposition epitaxy, Journal of Alloys and Compounds 448 (2008) 202-205, IF: 1.250
• P Basa, G Molnár, L Dobos, B Pécz, L Tóth, AL Tóth, AA Koós, L Dózsa, Á Nemcsics, ZJ Horváth: Formation of Ge nanocrystals in SiO2 by electron beam evaporation, J. Nanosci. Nanotechnol. 8 (2008) 818–822, IF: 1.929
• ZE Horváth, AA Koós, K Kertész, G Molnár, G Vértesy, MC Bein, T Frigyes, Z Mészáros, J Gyulai, LP Biró: The role of defects in chemical sensing properties of carbon nanotube films, Appl Phys A, 93 (2008) 495-504, IF: 1.739
• I Bakonyi, L Péter, ZE Horváth, J Pádár, L Pogány, G Molnár: Evolution of Structure with Spacer Layer Thickness in Electrodeposited Co/Cu Multilayers, Journal of The Electrochemical Society 155 (2008) D688-D692, IF: 2.387
• F Riesz, AE Pap, M Ádam, IE Lukács: Makyoh-topography study of the swirl defect in Si wafers, Thin Solid Films516 (2008) 8087-8091, IF: 1.693
• ZJ Horváth, P Basa, T Jászi, AE Pap, L Dobos, B Pécz, L Tóth, P Szöllősi, K Nagy: Electrical and memory properties of Si3N4 MIS structures with embedded Si nanocrystals, Journal of Nanoscience and Nanotechnology 8 (2008) 812-817, IF: 2.19

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2007

• Á Németh, E Horváth, Z Lábadi, L Fedák, I Bársony: Single step deposition of different morphology ZnO gas sensing films, Sensors and Actuators B 127 (2007) 157-160, IF: 2.331
• P Basa, ZJ Horváth, T Jászi, AE Pap, L Dobos, B Pécz, L Tóth, P Szöllősi: Electrical and memory properties of silicon nitride structures with embedded Si nanocrystals, Physica E 38 (2007) 71-75, IF: 0.946
• P Basa, P Petrik, M Fried, L Dobos, B Pécz, L Tóth: Si nanocrystals in silicon nitride: an ellipsometric study using parametric semiconductor models, Physica E 38 (2007) 76-79, IF: 0.946
• DL Wainstein, AI Kovalev, C Ducso, T Jaszi, P Basa, ZJ Horvath, T Lohner, P Petrik: X-ray photoelectron spectroscopy investigations of Si in non-stoichiometric SiNx LPCVD multilayered coatings, Physica E 38 (2007) 156-159, IF: 0.946
• G Amsel, G Battistig, D Samuel, C Ortega, JJ Ganem, S Rigo, I Trimaille: Handling, purification and recovery of isotopically enriched water or gases for isotopic tracing experiments with ion beam analysis in electrochemistry and physics, Nuclear Instruments and Methods B255 (2007) 423-434, IF: 0.946
• Z Zolnai, A Ster, NQ Khánh, G Battistig, T Lohner, J Gyulai, E Kótai, M Posselt: Damage accumulation in nitrogen implanted 6H-SiC: Dependence on the direction of ion incidence and on the ion fluence, Journal of Applied Physics, 101 (2007) 023502, IF: 2.316
• A Pongrácz, G Battistig, C Dücso, KV Josepovits, P Deák: Structural and electronic properties of Si/SiO2 MOS structures with aligned 3C-SiC nanocrystals in the oxide, Materials Science and Engineering C 27 (2007) 1444-1447, IF: 1.325
• NP Barradas, K Arstila, G Battistig, M Bianconi, N Dytlewski, C Jeynes, E Kótai, G Lulli, M Mayer, E Rauhala, E Szilágyi, M Thompson: International Atomic Energy Agency intercomparison of ion beam analysis software, Nuclear Instruments and Methods B262 (2007) 281-303, IF: 0.946
• C Dücső, I. Rajta, P. Fürjes , E. Baradács: Concept for processing of silicon check valves by proton beam micromachining, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 260 (2007) 409-413, IF: 0.946
• B Szentpáli: Noise Limitations of the Applications of Miniature Thermal Resistors, IEEE Sensors Journal 7 (2007) 1293-1299, IF: 1.117
• F Riesz, IE Lukács, J Szabó, J Makai, B Pődör, I Réti, B Szentpáli, I Eördögh: Makyoh-topográfia: egyszerű és hatékony eljárás félvezető szeletek simaságának vizsgálatára, Híradástechnika, LXII no. 10. pp. 19-24, 2007 (Hungarian)
• E Kuthi, I Pintér, T Mohácsy, A Ádám, B Szentpáli, I Bársony: PIII napelemek beltéri alkalmazásra, Híradástechnika, LXII no. 10. pp. 25-29, 2007 (Hungarian)
• B Szentpáli: Termisztorok és bolométerek zajhatárolt érzékenysége, Híradástechnika, LXII no. 10. pp. 35-42, 2007 (Hungarian)
• B Szentpáli: Mikrohullámú térmérő szondák, Híradástechnika, LXII no. 11. pp. 35-42, 2007 (Hungarian)
• G Vásárhelyi, B Fodor, T Roska: Tactile Sensing-Processing: Interface Cover Geometry & the Inverse Elastic Problem, Sens. Actuators A, 2007, vol. 140, pp. 8–18, IF: 1.348
• E Vazsonyi, Cs Ducso, A Pekker: Characterization of the anisotropic etching of silicon in two-component alkaline solution, J. Micromech. Microeng. 17 (2007) 1916–1922, IF:2.321

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2006

• N Nagy, AE Pap, E Horvath, J Volk, I Barsony, A Deak, Z Horvolgyi: Large area self-assembled masking for photonic applications, Appl Phys Lett 89 (2006)063104, IF: 4.127
• A Pongracz, G Battistig AL Toth, Z Makkai, C Ducso, KV Josepovits, I Barsony: Nucleation of SiC nanocrystals at the Si/SiO2 interface: Effect of the interface properties, J PHYS IV 132 (2006) 133-136, IF: 0.389
• B Szentpali, T Mohacsy, I Barsony: Conduction mechanisms in porous Si LEDs, CURR APPL PHYS 6 (2006) 174-178, IF: 1.000
• G Vasarhelyi, M Adam, E Vazsonyi, Z Vizvary, A Kis, I Barsony, C Ducso: Characterization. of an integrable single-crystalline 3-D tactile sensor, IEEE SENS J 6 (2006) 928-934 (2006), IF: 1.100
• N Nagy, A Deák, Z Hórvölgyi, M Fried, A Agod, I Bársony: Ellipsometry of silica nanoparticulate LB films for the verification of the validity of EMA, Langmuir 22 (2006) 8416-8423, IF: 3.705
• P Szöllősi, P Basa, Cs Dücső, B Máté, M Ádám, T Lohner, P Petrik, B Pécz, L Tóth, L Dobos, L Dózsa, ZJ Horváth: Electrical and optical properties of Si-rich SiNx layers: Effect of annealing, Current Applied Physics, Vol. 6 (2006) 179-181, IF: 1.000
• P Petrik, M Fried, É Vázsonyi, T Lohner, E Horváth, O Polgár, P Basa, I Bársony, J. Gyulai: Ellipsometric characterization of nanocrystals in porous silicon, Applied Surface Science 253 (2006) 200-203, IF: 1.263
• P Petrik, M Fried, T Lohner, NQ Khánh, P Basa, O Polgár, C Major, J Gyulai, F Cayrel, D. Alquier: Dielectric function of disorder in high-fluence helium-implanted silicon, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 253 (2006) 192-195, IF: 1.181
• G Battistig, NQ Khánh, P Petrik, T Lohner, L Dobos, B Pécz, J García López, Y. Morilla: A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy, J. Appl. Phys. 100 (2006) 093507, IF: 2.498
• ZJ Horváth: Semiconductor nanocrystals in dielectrics: Optoelectronic and memory applications of related silicon based MIS devices, Current Appl. Phys., 6 (2006) 145-148, IF: 1.000
• ZJ Horváth: Electrical pecularities in GaAs and Si based low dimensional structures, Current Appl. Phys., 6 (2006) 205-211, IF: 1.000
• L Dobos, B Pécz, L Tóth, ZJ Horváth, ZE Horváth, A Tóth, E Horváth, B Beaumont, Z Bougrioua: Metal contacts to n-GaN, Appl. Surf. Sci. 253 (2006) 655-661, IF: 1.26
• G Pető, NQ Khanh, ZE Horváth, G Molnár, J Gyulai, E Kótai, L Guczi, K Frey: Nanoscale morphology and photoemission of arsenic implanted germanium films, Journal of Applied Physics 99 (2006) 084304, IF: 2.498
• K Frey , A Beck, G Peto, G Molnar, O Geszti, L Guczi: Activity of TiO2 overlayer deposited on Au/SiO2/Si(100) model system, Catalysis Communications 7 (2006) 64-67, IF: 2.098
• M  Serényi, T Lohner, Z Zolnai, P Petrik, Á Nemcsics, NQ Khánh, P Turmezei: Studies on the RF Sputtered Amorphous SiGe Thin Films, Inorganic Materials 42 (2006) 3-6, IF: 0.387
• AE Pap, K Kordás, J Vähäkangas, A Uusimäki, S Leppävuori, L Pilon, S Szatmári: Optical properties of porous silicon. Part III: Comparison of experimental and theoretical results, Optical Materials 28 (2006) 506-513, IF: 1.162
• K Kordás, AE Pap, G Tóth, M Pudas, J Jääskeläinen, A Uusimäki, J Vähäkangas: Laser soldering of flip-chips, Optics and Lasers in Engineering 44 (2006) 112-121, IF: 0.847
• L Oroszi, A Dér, H Kirei, V Rakovics, P Ormos: Control of electroosmostic flow by light, Applied Physics Letters 89 (2006) 263508.1-3, IF: 4.127
• B Szentpáli, T Mohácsy, I Bársony I: Conduction mechanisms in porous Si LEDs, Current Applied Physics 6 (2006) 174-178 IF: 1.117
• A Manuaba, F Pászti, AR Ramos, NQ Khánh, B Pécz, Z Zolnai, A Tunyogi, E Szilágyi: Effect of pre-implanted oxygen in Si on the retention of implanted He, Nuclear Instruments and Methods in Physics Research B 249 (2006) 150-152, IF: 1.181

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2005

• Furjes P, Adam M, Ducso C, Zettner J, Barsony I, Thermal effects by the sensitive coating of calorimetric gas sensors, SENSORS AND ACTUATORS B-CHEMICAL  111 (2005) 96-101, IF: 2.391
• Vazsonyi E, Adam M, Ducso C, Vizvary Z, Toth AL, Barsony I, Three-dimensional force sensor by novel alkaline etching technique, SENSORS AND ACTUATORS A-PHYSICAL 123-24 (2005) 620-626, IF: 1.462
• Kulinyi S, Brandszajsz D, Amine H, Adam M, Furjes P, Barsony I, Ducso C, Olfactory detection of methane, propane, butane and hexane using conventional transmitter norms, SENSORS AND ACTUATORS B-CHEMICAL 111 (2005) 286-292, IF: 2.391
• Nagy N, Volk J, Hamori A, Barsony I, Submicrometer period silicon diffraction gratings by porous etching, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 202 (2005) 1639-1643, IF:0.86
• Volk J, Ferencz K, Ramsden J J, Tóth A L, Barsony I, In situ observation of the evolution of porous silicon interference filter characteristics, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 202 (2005) 1703-1706, IF:0.86
• Volk J, Norbert N, Barsony I, Laterally stacked porous silicon multilayers for subquart micron period UV gratings, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 202 (2005) 1707-1711, IF:0.86
• Makkai Zs, Pecz B, Barsony I, Vida Gy, Pongracz A, Josepovits KV, Deak P, Isolated SiC nanocrystals in SiO2, APPLIED PHYSICS LETTERS 86 (2005) 253109 IF: 4.308
•  Volk J, Le Grand T, Barsony I, Gombkötő J, Ramsden JJ , Porous silicon multilayer stack for sensitive refractive index determination of pure solvents, JOURNAL OF PHYSICS D: Appl.Phys. 38 (2005) 1313-1318, IF: 1.642
• Bognár Gy, Fürjes P, Székely V and Rencz M, Transient thermal characterisation of hot plates, Microsystem Technologies (2005) 1432-1858, IF 1.167
• P. Petrik, É. Vázsonyi, M. Fried, J. Volk, G. T. Andrews, A. L. Tóth, Cs. S. Daróczi, I. Bársony, J. Gyulai, "Optical models for the ellipsometric characterisation of porous silicon structures", Physica Status Solidi 2 (2005) 3319 IF: 0.95
• Zs. J.Horváth, M. Serényi, M. Ádám, I. Szabó, V. Rakovics, P. Turmezei, Z. Zolnai, N. Q. Khan, Electrical behaviour of sputtered Al/SiGe/Si structures, Acta Phys. Slovaca 55 (2005) 241-245, IF: 0.579

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